摘要
采用气液固机理生长了大批量均匀的InN纳米线,扫描电镜图像显示出这些光滑纳米线的平均直径和长度分别为65nm和15μm。高分辨透射电镜、选区电子衍射、微区拉曼散射光谱结合EDS能谱说明了纳米线为六方纤锌矿结构单晶,并证实了纳米线的生长遵循气液固生长机理。纳米线的光致发光光谱在1.89eV附近有一发光峰。改变NH3的流量可以调控纳米线的形貌和生长方向,我们从能量角度对此进行了解释。
Uniform indium nitride nanowires were grown at a large scale via vapor-liquid-solid growth mechanism.Scanning electron microscopy imaged that smooth indium nitride nanowires have an average diameter of 65nm and average length of 15μm.High-resolution transmission electron microscopy,selected-area electron diffraction,micro-Raman measurements combined with EDS revealed that indium nitride nanowires have the nature of single crystal with a hexagonal wurtzite structure and indicate that these nanowires follow VLS growth mechanism.Photoluminescence spectrum presented a dominant luminescent peak at 1.89eV.Morphology and growth of the nanowires can be controlled by changing NH3 flux,this phenomenon was explained by an energy minimization model.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2010年第12期2094-2097,共4页
Journal of Functional Materials
基金
国家自然科学基金重点资助项目(10834004)
关键词
InN纳米线
气液固生长
生长方向
indium nitride nanowires
vapor-liquid-solid growth
growth direction
