期刊文献+

OTS自组装单层膜诱导生长Sb_2S_3薄膜及其生长机理 被引量:6

Growth of Sb_2S_3 Thin Films Directed by OTS Self-assembled Monolayer and Its Formation Mechanism
下载PDF
导出
摘要 在接近室温的水溶液中通过采用OTS-自组装单分子层制备了Sb2S3薄膜。利用X-射线粉末衍射(XRD)、扫描电子显微镜(SEM)、X-射线能量色散谱(EDS)和紫外-可见分光光度计(UV-Vis)对Sb2S3薄膜的结构、形貌和光学性能进行了表征。结果表明,低温下所制备的薄膜为非晶态结构,当薄膜在空气中200~300℃热处理1h时,非晶态薄膜转化成具有正交晶相结构的多晶结构。光学性能测试表明,沉积的Sb2S3薄膜和在空气中200℃热处理1h后Sb2S3薄膜的能带值分别为2.05和1.78eV。功能化OTS自组装单分子层(SAMs)在Sb2S3薄膜的生长过程中起到了诱导生长的作用。通过实验结果,进一步分析了Sb2S3薄膜的形成机理。 Self-assembled monolayers (SAMs) of octadecyl-trichloro-silane (OTS) were used to induce the nucleation and growth of antimony sulphide (Sb2S3) thin films from aqueous solution at a near room temperature. The structure, morphology, and optical properties of the as-synthesized Sb2S3 thin films were investigated using X-ray diffraction, scanning electron microscopy, X-ray energy-dispersive spectroscopy, and UV-Vis spectrometer. The result shows that the as-deposited film is amorphous structure. By heating up to 200-300 ℃ for 1 h in air, the deposited films were transformed into polycrystalline with orthorhombic structure. The values of optical band energy were evaluated as 2.05 eV and 1.78 eV for the as-deposited and annealed Sb2S3 films at 200 ℃ for 1 h in air, respectively. It was found that the OTS-functionalized SAMs films play an active role for controlling nucleation and growth of Sb2S3 thin films at low temperature. The formation mechanism of Sb2S3 thin films was proposed according to the experiment results.
出处 《无机化学学报》 SCIE CAS CSCD 北大核心 2010年第11期2041-2046,共6页 Chinese Journal of Inorganic Chemistry
基金 国家大学生创新性实验计划项目(No.091071848)资助
关键词 自组装单分子层 光学性能 半导体 微观结构 self-assembled monolayers optical property semiconductor microstructure
  • 相关文献

参考文献1

二级参考文献8

  • 1Kubel F, Schmid H. Acta Crystallographica Section B, 1990, 46 (11) : 698-702. 被引量:1
  • 2Swartz S L, Wood V E. Condensed Matter News, 1992, 15(4) : 427- 431. 被引量:1
  • 3Evans J T, Womack R. IEEE J. Solid State Circuits, 1988, 23(5) : 1171-1175. 被引量:1
  • 4Li J F, Wang J L, Wutting M, et al. Applied Physics Letters, 2004, 84(4) : 5261-5263. 被引量:1
  • 5Fan W, Kabius B, Hiller J M, et al. Journal of Applied Physics, 2003, 94(9) : 6192-6196. 被引量:1
  • 6Chen C L, Shen J, Miranda F A, et al. Applied Physics Letters, 2001, 78(5) : 652-657. 被引量:1
  • 7Sung H H, Sun K R, Lee I M, et al. Thin Solid Films, 2002, 409 (16) : 82-87. 被引量:1
  • 8Cheng J G, Tang J, Meng X J, et al. Journal of the American Ceramic Society, 2001, 84(7) : 1421-1424. 被引量:1

共引文献4

同被引文献122

  • 1韩文,曹丽云,黄剑锋.pH值对电沉积PbS薄膜结构和性能的影响[J].人工晶体学报,2009,38(1):60-63. 被引量:2
  • 2杨岩,张海明,李菁,缪玲玲,李芹.超声喷雾热解法制备不同掺杂浓度ZnO∶Eu薄膜[J].人工晶体学报,2012,41(S1):331-335. 被引量:3
  • 3刘剑,苗鸿雁,谈国强,贺中亮,夏傲.钛酸锶功能陶瓷薄膜的液相自组装制备及表征[J].人工晶体学报,2009,38(S1):81-84. 被引量:2
  • 4Bagde G D,Pathan H M,Lokhande C D,et al.Studies on Sprayed Lanthanum Sulphide(La2S3)Thin Films from Non-aqueous Medium[J].Applied Surface Science,2005,252:1502-1509. 被引量:1
  • 5Kukli K,Heikkinen H,Nykanen E,et al.Deposition of Lanthanum Sulfide Thin Films by Atomic Layer Epitaxy[J].Journal of Alloys andCompounds,1998,275-277:10-14. 被引量:1
  • 6Tian L,Ouyang T,Loh K P,et al.La2S3 Thin Films from Metal Organic Chemical Vapor Deposition of Single-source Precursor[J].Journal ofMaterials Chemistry,2006,16:272-277. 被引量:1
  • 7Sokolov V V,Kamarzin A A,Trushnikova L N,et al.Optical Materials Containing Rare Earth Ln2S3 Sulfides[J].Journal of Alloys andCompounds,1995,225:567-570. 被引量:1
  • 8Ohta M,Yuan H B,Hirai S,et al.Preparation of R2S3(R:La,Pr,Nd,Sm)Powders by Sulfurization of Oxide Powders Using CS2 Gas[J].Journal of Alloys and Compounds,2004,374:112-115. 被引量:1
  • 9Ohta M,Hirai S,Ma Z,et al.Phase Transformation and Microstructures of Ln2S3(Ln=La,Sm)with Different Impurities Content of Oxygen andCarbon[J].Journal of Alloys and Compounds,2006,408-412:551-555. 被引量:1
  • 10Forster C M,White W B.Optical Absorption Edge in Rare Earth Sesquisulfides[J].Materials Research Bulletin,2006,41:448-454. 被引量:1

引证文献6

二级引证文献10

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部