期刊文献+

一种智能型熔断器寿命试验与评估系统 被引量:2

A Type of Lifetime Test and Evaluation System for Tube Fuse
下载PDF
导出
摘要 根据老化机理建立的基于金属电迁移理论的熔断器寿命预测模型,开发了一套熔断器寿命评估系统。该系统能够采集精确的、全面的寿命试验数据,经过数据分析与处理,能得到组熔断器的预测寿命。最后,以TDP44-1A型熔断器为例,对所述寿命评估方法进行了验证,说明了方法的有效性。 Based upon comprehensive studies on the ageing mechanism of nuclear tube fuses,a fuse lifetime anticipation model based on the theory of electromigration was determined,and a set of fuse lifetime evaluation sys-tem was developed.This system enables the collection of accurate and completed lifetime test data that could be an-alysed and processed,from which the anticipated fuse lifetime could be evaluated.Finally,an example of lifetime tests for TDP44-1A type fuse was given to verify the effectiveness of the evaluation methods mentioned above.
出处 《低压电器》 北大核心 2010年第20期52-57,共6页 Low Voltage Apparatus
关键词 管状熔断器 寿命试验 金属电迁移 寿命预测模型 寿命评估系统 tube fuses lifetime test electromigration lifetime anticipation model lifetime evaluation system
  • 相关文献

参考文献8

二级参考文献38

  • 1卢文跃,李晓明,韩庆浩,戴忠华,洪振旻,陈世均.核电站设备可靠性管理体系的探索与运作[J].核动力工程,2005,26(S1):65-72. 被引量:20
  • 2陈云翔.可靠性与可修性工程[M].北京:国防工业出版社,2007:143-170. 被引量:5
  • 3王世萍.电子机械可靠性与维修性[M].北京:清华大学出版社,1999. 被引量:2
  • 4Malone D W, Hummel R E. Electromigration in Integrated Circuits [J].Sol Sta Master Sci, 1997, 22 (3): 199-238. 被引量:1
  • 5Bagnoli P E, Ciofi C, Neri B. Electromigration in A1 Based Stripes: low Frequency Noise Measurements and MTF Tests [J].Microelectronics Reliability, 1996, 36 (7/8):1045-1050. 被引量:1
  • 6Pennetta C, Reggiani L, Trefan G. A Stochastic Approach to Failure Analysis in Electromigration Phenomena [J] .Microelectronics Reliability, 1999, 39 (6): 857-862. 被引量:1
  • 71992 VMIC Tutorial Short Couse [A].1992 Santa Clara,CA [C]. 1992. 被引量:1
  • 8Hu C-K,Rosenberg R,Rathore R S,et al.Scaling effect on electromigration in on-chip wiring[A].Proc IEEE 1999 Int Interconn Technol Conf[C].San Francisco,CA,USA.1999.267-269. 被引量:1
  • 9Lloyd J R,Lane M W,Liniger E G,et al.Electromigration and adhesion[J].IEEE Trans Dev and Mater Reliab,2005,5(1):113-118. 被引量:1
  • 10Lee K L,Hu C-K,Tu K N.In situ scanning electron microscope comparison studies on eleetromigration of Cu and Cu(Sn)alloys for advanced chip interconnects[J].J Appl Phys,1995,78(7):4428-4437. 被引量:1

共引文献15

同被引文献13

引证文献2

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部