摘要
采用Monte Carlo方法,模拟计算了能量在20-200keV之间的V+注入花生种子的深度-浓度分布。核碰撞能量损失采用经典的两体碰撞理论,电子能量损失用Lindhard-Scharff公式,结果表明理论模型建立相对合理,低能重离子的电子能量损失相对较小可以忽略,200keVV+离子在花生种子中的平均射程为6.16μm,并对理论和实验结果的差异进行了分析。
The depth and density distribution of V＋ which has been penetrated into ion beam is simulated by the Monte Carlo method. The action of ions implanted in plant seeds is studied by the classical collision theory of two objects, the electronic energy loss is calculated by Lindhard- Scharff formulation. On the basis of dealing with the target material, the depth and density distribution of different energy in peanut seeds is calculated. The result indicates that the depth of 200keV V^＋ implanted into peanut seed is 6.16μm, which agrees with experimental results, and the model is appropriate to describe this interaction. This paper provides a computational method for the depth and density distribution of ions with low energy implanted in plant seeds.
出处
《科技信息》
2010年第13X期21-22,274,共3页
Science & Technology Information
关键词
离子注入
蒙特卡罗模拟
种子
深度-浓度分布
Ion implantation
Monte Carlo simulation
Seeds
Depth-concentration distribution
