摘要
利用电子束蒸发技术在玻璃衬底上沉积了Ta掺杂ITO(ITO∶Ta)薄膜,对比研究了在不同退火温度下ITO∶Ta和ITO薄膜表面形貌、方阻、载流子浓度、霍尔迁移率和透光率的变化情况。结果表明,随着退火温度的上升,ITO∶Ta薄膜的晶化程度不断提高,并获得较低的表面粗糙度。在合适的退火温度下,ITO∶Ta薄膜的光电性能也有显著的改善。当在氮气氧气氛围下经过500℃退火时,ITO∶Ta薄膜得到最佳的综合性能,表面均方根粗糙度为2.17 nm,方阻为10～20Ω,在440 nm的透光率可达98.5%。
Tantalum-doped indium tin oxide（ITO∶ Ta） thin films were deposited by the electron-beam evaporation technique with an ITO target containing 0.2 wt% tantalum.The effect of annealing temperature on surface morphology,sheet resistance,carrier concentration,hall mobility and transmittance of both ITO∶ Ta and ITO thin films was investigated in detail.The results show that ITO∶ Ta thin films exhibit a higher degree of crystallization and lower surface roughness with increasing annealing temperature.Reasonable annealing temperature can remarkably improve the electrical and optical properties of ITO∶ Ta thin films.ITO∶ Ta thin films annealed at 500 ℃ under O2 ＋ N2 ambient have the best comprehensive properties,including a root mean square roughness of 2.17 nm,a sheet resistance of 10 ～ 20 Ω and a transmittance of 98.5% at 440 nm.
出处
《材料热处理学报》
EI
CAS
CSCD
北大核心
2010年第7期25-29,共5页
Transactions of Materials and Heat Treatment
基金
粤港关键领域重点突破项目(2007A010501008)
广东省教育部产学研结合项目(2009B09030038)
教育部博士点基金项目(2007498351)
关键词
ITO薄膜
掺杂
电子束蒸发
退火温度
ITO films
doping
electron-beam evaporation
annealing temperature
