摘要
采用电子回旋共振-等离子体辅助增强金属有机物化学气相沉积两步生长法在玻璃衬底上低温沉积GaN薄膜。利用原位反射高能电子衍射、X射线衍射、室温透射光谱和原子力显微镜,研究了不同TMGa流量条件下沉积的GaN薄膜的结晶性、光学性质和表面形貌。结果表明,TMGa流量对GaN薄膜质量影响很大,TMGa流量约为1.4cm3/min(标准状态)条件下沉积的GaN薄膜结晶性较好,呈高度c-轴择优取向,420～1110nm波长光区内透过率超过90%,薄膜表面由大小均匀的亚微米量级表面岛按一致取向堆砌而成。
The GaN films were grown by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition on glass substrates.The impacts of the deposition conditions,including the trimethylgallium （TMGa） flow rate,pressure and deposition temperature,on the film quality were evaluated.The microstructures and properties of the GaN films were characterized with in-situ reflection high energy electron diffraction,X-ray diffraction,room temperature transmission spectroscopy,and atomic force microscopy.The results show that the TMGa flow rate significantly affects the properties of the GaN films.At a TMGa flow rate of 1.4 cm3/min（standard state）,the highly-crystallized,compact GaN film with c-axis orientated submicron grains has a transmission of 90% in the range of 420～1110 nm.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2010年第4期445-449,共5页
Chinese Journal of Vacuum Science and Technology
基金
辽宁省教育厅重点实验室项目
国家自然科学基金项目(No.60476008)
