摘要
本文提出了一种新型的MOCVD恒流配气系统,该配气系统可有效地稳定控制温度和压力等关键工艺条件,在多层复杂结构的生长中改善材料质量。本文给出了该配气系统同传统配气方式生长效果的比较,PL对比测试结果表明,该配气系统在多量子阱结构的制备中具有良好的效果。
A novel type of gas supply system has been developed to grow high quality InGaN/GaN mulitlayers used for fabrication of multi-quantum wells （MQWs） by metal organic chemical vapor deposition （MOCVD）. Its major advantage is the effective control of the steady pressure and temperature. Compared with the conventional gas supply system, the new one produces MQWs with much better quality, as shown in the photoluminescence （PL） spectra.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2006年第4期313-316,共4页
Chinese Journal of Vacuum Science and Technology
