摘要
本文详细研究了采用Cl_2/H_2刻蚀气体时,ICP刻蚀系统对InP/InGaAsP材料表面损伤的影响。通过设计特殊结构的InP/InGaAsP多量子阱结构,测量刻蚀区域及非刻蚀区域的光荧光强度的变化,并结合高斯深度分布模型对刻蚀损伤进行定量研究。详细研究ICP刻蚀系统中的压强、ICP功率、RF功率以及Cl_2/H_2刻蚀气体组分对损伤程度的影响。基于这些结果优化得到一组低损伤参数,最终实现刻蚀损伤深度小于16nm。
Using Cl2/H2 as etching etchants, the surface damage of the InP/InGaAsP material in ICP etching system was investigated. By measuring the changes of photoluminescenee （PL） intensity from a specially designed InP/InGaAsP multi -quantum well （MQW） in both exposed and protected regions, and utilizing a Gaussian Depth Distribution model, the extent of damage was quantitatively analyzed. The influences of pressure, ICP power, RF power and Cl2/H2 mixing ratio of ICP system on the surface dan〉 age extent were revealed. Based on these results, a set of optimized low damage etching parameters with a less than 16 nm damage -depth was finally obtained.
出处
《功能材料与器件学报》
CAS
CSCD
北大核心
2010年第3期243-248,共6页
Journal of Functional Materials and Devices
基金
国家重点基础研究计划(973计划)资助项目(2010CB327603).
