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条形InP/InGaAsP-EAM的色散特性实验研究

Experimental research on dispersion characteristics of strip InP/InGaAsP-MQW-EAM
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摘要 采用Agilent公司的81910A光子全参数测试仪,实验研究了不同组分比的条形InP/In1-xGaxAs1-yPy多量子阱电吸收调制器(MQW-EAM)的色度色散(CD)特性。研究结果表明,Ⅲ-Ⅴ半导体MQW-EAM的CD特性与材料密切相关,并估算了EAM的带宽。因此,对应用于高速光通信系统中的同类型半导体光子器件,所用材料必须尽可能一致,以保证其高速性能的一致性。 With the 81910A photonic all-parameter tester from Agilent Company the chromatic dispersion characteristics of strip InP/In1-x Gax As1-y Py-multiple-quantum-well electro-absorption-modulator(MQW-EAM) with different component ratios are studied,and the bandwidth of EAM is estimated. The research results show that the dispersion characteristics of Ⅲ-Ⅴ semiconductor MQW-EAM are closely related to materials. Therefore,the materials for semiconductor photonic devices with the same type applied to high-speed optical communication system must be accordant to the greatest extent, so as to en sure the consistency of high-speed performance of seml-conductor photonic devices.
出处 《光电子.激光》 EI CAS CSCD 北大核心 2008年第4期434-438,共5页 Journal of Optoelectronics·Laser
基金 国家“863”高技术研究发展计划资助项目(2002AA31230)
关键词 InP/InGaAsP 色度色散(CD) 群时延(GD) 电吸收调制器(EAM) 多量子阱(MQW) InP/InGaAsP chromatic dispersion(CD) group delay(C-D) electro-absorption-modulator(EAM) multiple quantum well(MQW)
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