摘要
用射频磁控溅射和直流磁控溅射的方法分别在Si(100)衬底和Cu膜间制备了30nm的NbN薄膜,Cu/NbN/Si样品在高纯氮气保护下退火至700℃。用四探针电阻测试仪(FPP)、AFM、SEM、XRD、AES研究了溅射方式对NbN薄膜扩散阻挡性能的影响。退火前XRD结果表明,直流溅射制备的NbN薄膜为典型的晶态结构,射频溅射制备的薄膜为典型的非晶态结构。高温退火后的XRD、SEM、FPP、AES研究结果表明非晶态结构的NbN薄膜有更好的扩散阻挡性能,700℃时仍能很好地阻挡Cu原子的扩散。
NbN barrier layers with a thickness around 30nm were grown between Si（100）substrates and Cu in rf and dc magnetron sputtering system,respectively.The Cu/NbN/Si samples were annealed up to 700℃ under the protection of pure nitrogen gas.In order to investigate the effect of NbN sputtering method on NbN diffusion barrier performance in Cu metallization,4-point probe technique（FPP）,atomic force microscopy（AFM）,scanning electron microscope（SEM）,X-ray diffractometry（XRD）and Auger electron spectroscopy（AES）were performed,respectively.It is found that the microstructure of NbN film is very sensitive to NbN sputtering method.The NbN film deposited in a dc magnetron sputtering system is crystalline phase but amorphous in a rf magnetron sputtering system.FPP、XRD、SEM and AES results after annealing show that amorphous NbN film is a better diffusion barrier against Cu diffusion even after being annealed at 700℃ for an hour.
出处
《材料科学与工程学报》
CAS
CSCD
北大核心
2010年第3期458-462,共5页
Journal of Materials Science and Engineering
基金
国家自然科学基金资助项目(50773014)
黑龙江省教育厅资助项目(11541282)
关键词
NbN薄膜
扩散阻挡层
CU互连
磁控溅射
NbN films
diffusion barrier
Cu metallization
magnetron sputtering
