摘要
用射频反应磁控溅射的方法在Si(100)衬底和Cu膜间制备了25nm的纳米晶Zr-N阻挡层,Cu/Zr-N/Si样品在高纯氮气保护下退火至700℃。用四探针电阻测试仪(FPP)、AFM、SEM、XRD、AES研究了溅射参数对Zr-N薄膜电阻率和扩散阻挡性能的影响。实验结果表明,N2分压从20%增加到25%,电阻率快速增高;溅射偏压不同,Zr-N的结构可由非晶态结构转变为纳米晶。纳米晶Zr-N阻挡层650℃退火1h后仍能有效地阻止Cu的扩散。
Nano-crystal zirconium nitride（Zr-N） barrier layer with thickness around 25nm was grown between Si （100） substrates and Cu in a rf magnetron sputtering system. The samples were subjected to thermal annealing to 700℃ under the protection of pure nitrogen gas. In order to investigate the effect of deposition parameters on resistivity and diffusion barrier properties of Zr-N films,4-point probe technique（FPP）,atomic force microscopy （AFM）, scanning electron micoroscopy（SEM）, X-ray diffraction（XRD）, and Auger electron spectroscopy（AES） were performed respectively. It is found that the resistivity of Zr-N film increases rapidly when N2 flow ratio changes from 20%-25%. Additionally, Zr-N film microstructure is very sensitive to the sputtering bias. Zr-N films deposited at various substrate bias can produce amorphous and nano-crystalline phase. Nano-crystal Zr-N film has better diffusion barrier property and still performed well against Cu diffusion after being annealed under 650℃ for an hour.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2008年第9期1545-1548,共4页
Journal of Functional Materials
基金
国家自然科学基金资助项目(50773014)
哈尔滨工程大学实验教学研究与改革立项资助项目(SJY06044)
