摘要
The influence of laser conditioning on defects of HfO2 monolayer films prepared by electron beam evaporation （EBE） is investigated utilizing the spot-size effect of the laser-induced damage.It is found that the laser-induced damage threshold of HfO2 monolayer films can be increased by a factor of 1.3-1.6.It is also found that the defects with low threshold can be removed by laser conditioning and defects with higher threshold may be removed partially.
The influence of laser conditioning on defects of HfO2 monolayer films prepared by electron beam evaporation （EBE） is investigated utilizing the spot-size effect of the laser-induced damage.It is found that the laser-induced damage threshold of HfO2 monolayer films can be increased by a factor of 1.3-1.6.It is also found that the defects with low threshold can be removed by laser conditioning and defects with higher threshold may be removed partially.
