摘要
首次提出一种新的具有双面界面电荷岛结构的SOI高压器件(DCI SOI)。该结构在SOI器件介质层上下界面分别注入形成一系列等距的高浓度n+区及p+区。器件外加高压时,纵向电场所形成的反型电荷将被未耗尽n+区内高浓度的电离施主束缚在介质层上界面,同时在下界面积累感应电子。引入的界面电荷对介质层电场(EI)产生附加增强场(ΔEI),使介质层承受更高耐压,同时对顶层硅电场(ES)产生附加削弱场(ΔES),避免在硅层提前击穿,从而有效提高器件的击穿电压(BV)。详细研究DCI SOI工作机理及相关结构参数对击穿电压的影响,在5μm介质层、1μm顶层硅上仿真获得750 V高耐压,较常规结构提高254.4%,其中,附加场ΔEI和ΔES分别达到642.5 V/μm和24 V/μm。
An SOI high voltage device with a novel structure of double-side interface charge island（DCI） was presented for the first time.DCI SOI was characterized by a series of equidistant high concentration of n＋-region and p＋-region on the top and bottom interfaces of dielectric buried layer,respectively.Interface inversion holes resulting from vertical electric field are located in the spacing of two neighboring n＋-regions.At the same time,inductive electrons are accumulated on the bottom interface.The interface charges introduced effectively enhanced the electric field of dielectric buried layer（EI） and reduced the electric field of silicon layer（ES）,which resulted in a high breakdown voltage.The enhanced field ΔEI and reduced field ΔES by accumulated interface charges reached 642.5V/μm and 24V/μm,respectively,which increased breakdown voltage of DCI SOI to 750 V from 206 V of the conventional SOI.
出处
《微电子学》
CAS
CSCD
北大核心
2010年第3期425-429,共5页
Microelectronics
基金
国家自然科学基金资助项目(60436030
60806025)
关键词
绝缘体上硅
高压器件
电荷岛
界面电荷
Silion On Insulator（SOI）
High voltage device
Charge island
Interface charge
