摘要
介绍了一种单层多晶硅ＣＭＯＳ工艺。该工艺采用Ｐ型衬底、Ｎ型Ｐ型双埋层、Ｎ型薄外延结构，掺杂多晶硅作为ＣＭＯＳ晶体管栅极和双极ＮＰＮ晶体管的发射极。ＣＭＯＳ晶体管采用源漏自对准结构，钛和铝双层金属作为元件互连线，ＰＥＣＶＤＳｉＮｘ介质作为钝化薄膜。
A bipolar based single polysilicon BiCMOS technology is investigated.Double buried layers,N type epitaxial layer,double layers of metal Ti Al and PECVD SiN x are chosen for the technology.Doped polysilicon is used as the gate of CMOS devices and the emitter of NPN transistors in the technology,and the self aligned structure for COMS devices were developed.
出处
《微电子学》
CAS
CSCD
北大核心
1999年第1期10-14,共5页
Microelectronics
