摘要
本文是文献［１］的续篇，给出了在多晶硅和单晶硅发射极区域中涉动电流和存贮电荷的解析分析，将它们表示成发射结电压Ｖｂｅ的函数。在文献［１］中已知Ｖｂｅ决定于基区中的正态模涉动电流，从而发射极区域中的涉动电流与存贮电荷也是收集极传导电流Ｉｃ和收集极与基极之间电位差Ｖｃｂ的函数。在此基础上，并与文献［１］相结合，本文对双多晶硅自对准结构双极型晶体管工作于饱和的行为提出了一个严格的解析模型。
This paper is the next part of the reference [fi. First it provides the analysis of the mobile currents and storage charges in the polgsilicon and monosilicon emitter expressing them into the functions of the emitting junction voltage, Van. It is known from the reference LIJ thatV' is determined by the mobile current of normal mode in the base. Therefore, the mobilecurentS and storage charges in the emitter are also the functions of the conductive collector current, Ic, and the voltage between collector and base, V.h' Combined with the first part of thereference[1], a strict analytical model is given for the behaviour of double POlysilicon self-aligned structure biPOlar transistors operating in saturation on this basis.
出处
《浙江工业大学学报》
CAS
1995年第3期224-230,共7页
Journal of Zhejiang University of Technology
基金
国家自然科学基金
关键词
双极型
晶体管
多晶硅发射极
开关特性
Bipolar transistors
Polysilicon emitter
Switching properties
