摘要
以SnCl4、SbC13、NaOH等为原料,采用共沉淀法制备ATO半导体颜料,采用XRD、SEM、EDS对颜料结构、成分、形貌进行表征,比较了ATO半导体颜料与常见的单组分颜料涂层红外发射率大小。通过颜色混合规律将ATO半导体颜料与着色颜料混合制备了绿色伪装涂料,制备的涂层具有较低的红外发射率,并且其光谱反射曲线满足美军标的光谱通道要求,具有较好的应用前景。
Semiconductor ATO pigment were prepared by a co -precipition of SnCl4, SbCl3 and NaOH. The structure, composition and the surface morphology of the pigments prepared were characterized by X - ray diffraction, energy dispersive spectra and scanning electronic microscope. The infrared emissivity of the coatings was lower than that of coatings made by conventional pigments. The colour mix law was used to prepare the green camouflage coatings, which showed low infrared emissivity, by the use of ATO semiconductor pigment and conventional pigments. At the same time, the reflectance of camouflage coatings can meet the requirements of America Military Specifications, proriding great application prospect.
出处
《涂料工业》
CAS
CSCD
北大核心
2010年第5期8-10,共3页
Paint & Coatings Industry
关键词
共沉淀法
ATO半导体颜料
红外发射率
光谱反射率
伪装涂料
co - precipition method
ATO semiconductor pigments
infrared emissivity
spectrum reflectance
camouflage coatings
