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新型磁驱动增大检测电容的高精度MEMS惯性传感器研究 被引量:3

A Novel MEMS Inertial Sensor with the Actuators Drived by Lorentz Force for Increasing the Initial Sensing Capacitance
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摘要 增大传感器振子的质量和静态测试电容可以减小电容式MEMS惯性传感系统的噪声,而深度粒子反应刻蚀工艺由于复杂的工艺原因,当深宽比较大时,不能刻蚀出大质量和大初始电容的传感器.据此,本文研究了一种磁驱动增大检测电容的MEMS惯性传感器,通过电磁驱动器,传感器的静态测试电容可以大幅增加,在梳齿电容上刻蚀阻尼槽后,其机械噪声达到0.61μg每根号赫兹,仿真其共振频率为598Hz,静态位移灵敏度为0.7μm每重力加速度,基于硅-玻璃键合工艺,制作了栅形条电容式惯性传感器,并用电磁驱动的方式测试其品质因子达到715,从而验证了制作工艺的可行性和电磁驱动器改变传感器初始静态测试电容的可行性. The noise of capacitive MEMS inertial sensor system can be depressed by increasing the mass of the seismic and initial sensing capacitance, which can not be obtained by deep ion etch process when the aspect ratio of comb capacitance is very large. Accordingly, a novel super high precision MEMS inertial sensor with the actuators drived by Lorentz force for increasing the initial sensing capacitance is developed in this paper. The initial sensitive capacitance is increased largely by the actuators, the mechanical noise is reduced to 0.61ug per square root Hz by etching damping slots in the sensitive combs of actuators. The resonant frequency obtained by ANSYS is 598Hz, and the static displacement sensitivity is 0.7μm per g acceleration of gravity. The grid capacitive inertial sensor is fabricated by MEMS silicon-glass bonding process, and the quality factor tested by which the sensor is drived by Lorentz force is 715 in air, which proves the feasibility of the idea that the novel MEMS sensor can be fabricated by sill con-glass bonding process and its initial sensing capacitance can be increased by Lorentz force actuators.
出处 《电子学报》 EI CAS CSCD 北大核心 2010年第5期1053-1057,共5页 Acta Electronica Sinica
基金 国家自然科学基金(No.60506015) 浙江省自然科学基金(No.Y107105) 传感技术联合国家重点实验室开发基金
关键词 电容式加速度计 惯性传感器 高精度 深度粒子反应刻蚀 capacitive accelerometer inertial sensor high precision deep RIE
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参考文献13

  • 1B Vakili Amini,S Pourkamali,F Ayazi.A high resolution, stictionless, CMOS compatible SOI accelerometer with a low noise,low power,0.25.m CMOS interface[ A] .in Proc. IEEE MEMS[ C]. Kyoto: Jan. 2003.572 - 575. 被引量:1
  • 2J Chae , K Najafi. An in-plane high sensitivity micro-g accelerometer[ A]. in Proc. IEEE. MEMS[ C ]. Kyoto: Jan. 2003. 466-469. 被引量:1
  • 3N Yazdi , K. Najafi. An all-silicon single-wafer micro-g accelerometer with a combined surface and bulk micromachining process[ J ]. J. Microelectromech. Syst., 2000, 9 ( 4 ) : 544 - 550. 被引量:1
  • 4T B Gabrielson.Mechanical-thermal noise in micromachined acoustic and vibration sensors[ J]. IEEE Trans. Electron Dev., 1993,40(5) :903 - 909. 被引量:1
  • 5P R Gray, R G Meyer. Analysis and Design of Analog Integrated Circuits[M] .3rd ed, Eagland: Wiley press, 1977.51 - 101. 被引量:1
  • 6Dong L,Che L,Sun L,et al. Effects of non-parallel combs on reliable operation conditions of capacitive inertial sensor for step and shock signals[J]. Sensors and Actuators A, 2005,121 (2) : 395 - 404. 被引量:1
  • 7董林玺,颜海霞,钱忺,孙玲玲.倾斜梳齿的MEMS电容式传感器惯性脉冲响应特性研究[J].电子学报,2008,36(5):1035-1040. 被引量:12
  • 8Chang Han Je,Myunglae Lee, Sunghye Jung,et al. Sensing gap reconfigurable capacitive type MEMS accelerometer [ A ]. Proceedings of SPIE - The International Society for Optical Engineering,Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV [ C ]. California : 2007: 68001Z-1-68001Z-7. 被引量:1
  • 9Dong Linxi, Yan Haixia, Huo Weihong, et al. A novel MEMS inertial sensor with enhanced sensing capacitors[ J] .Journal of Semiconductors, 2009,30(5) : 054003-1-054003-7. 被引量:1
  • 10Bao Minhang. Handbook of sensors and actuators series:Micro Mechanical Transducer[M]. Sencond ed., United Kingdom: Elsevier Press,2004.135 - 150. 被引量:1

二级参考文献10

  • 1Linxi Dong,et al. Effects of non-parallel combs on reliable operation conditions of capacitive inertial sensor for step and shock signals[ J ]. Sensors and Actuators A, 2005, 121 ( 2). 395 -404. 被引量:1
  • 2Bao Minhang. Handbook of sensors and actuators series:Micro Mechanical Transducer[ M ]. Elsevier, 2000.123 - 150. 被引量:1
  • 3FEH Tay ,et al. The effects of non-parallel plates in a differential capacitive microaccelerometer[ J]. Journal of Micromechanics and Microengineering, 1999,9(4) :283 - 293. 被引量:1
  • 4Chabloz M, et al. A mechod to evade microloading effect in deep reactive ion eching for anodically bonded glass-silicon structures[ A]. Proceeding of IEEE Micro ElectroMechanical System Workshop ( MEMS' 00) [ C ]. Miyazaki, japan, 2000.283 - 287. 被引量:1
  • 5T B Gabrielson.Mechanical-thermal noise in micromachined acoustic and vibration sensors[ J]. IEEE Transaction on Electron Devices, 1993,40(5) :903 - 909. 被引量:1
  • 6L A Rochal, et al. Measuring and interpreting the mechanicalthermal noise spectrum in a MEMS [ J ]. Journal of Micromechanics and Microengineering, 2005,15(7) .30 - 38. 被引量:1
  • 7Haluk Kulah, et al. Noise analysis and characterization of a sigma-delta capacitive microaccelerometer [ J ]. IEEE Journal of Solid-State Circuits, 2006,41 (2) : 352 - 361. 被引量:1
  • 8Ki-Ho Han, et al. Self-balanced navigation-grade capacitive microaccelerometers using branched finger electrodes and their performance for varying sense voltage and pressure[ J ]. Journal of Mi Systems,2003,12(1):11-20 被引量:1
  • 9Lufeng Che, et al. Effects of bias voltage polarity on differential capacitive sensitive devices[ J]. Sensors and Actuators A, 2004, 112(2 - 3) :253 - 261. 被引量:1
  • 10Yuh-Chung Hu. Closed form solutions for the pull-in voltage of micro curled beams subjected to electrostatic loads [ J ]. Journal of Micromechanics and Microengineering, 2006, 16 (3) :648 - 655. 被引量:1

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