摘要
研究了CCD敏感参数受辐照后的退化情况。分析了电荷转移效率受不同粒子辐照后的退化情况,并列表进行了对比;分析了暗电流受辐射增大的规律;分析了平带电压和阈值电压受辐射后的漂移现象。初步确定了CCD敏感参数的辐射损伤阈值范围。
The sensitive parameters which are degraded by radiation damage are researched. It is analyzed that charge transfer efficiency（CTE） is decreased by irradiation of different particles. CTEs are listed to contrast degradation before and after radiation. It is analyzed that the radiation damage induces the dark current increase, the flatband voltage and the threshold shift. The damage thresholds of CCD sensitive parameters are primary decided
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
2010年第2期151-156,170,共7页
Nuclear Electronics & Detection Technology
关键词
CCD
辐射损伤
体缺陷
敏感参数
损伤阈值
CCD, Radiation damage, Bulk trap, Sensitive Parameters, Damage threshold 170
