摘要
压印光刻在图形转移之后,需要去除残留在凹槽底部的胶。采用RIE工艺对紫外压印胶的刻蚀速率进行了研究。结果表明,随着气压或气体流量增大,刻蚀速率均会先增加,达到一定值后又开始下降;在刻蚀气体中加入SF_6后,会减少钻蚀,但刻蚀速率会有少许下降;而在刻蚀气体中加入少量SF_6且压强及流量较大时,各部分的刻蚀速率一致性较好。由此得到了一个优化后的刻蚀条件,反应气体:O_2+SF_6,气体流量分别为40 cm^3/min和5 cm^3/min,压强9.31 Pa,RF功率20 W,此时刻胶速率可稳定在0.8μm/min左右,且均匀性较好。
After graphics being transferred in the nanoimprint lithography process, the remaining photoresist at the bottom of the notch should be removed. Some researches on the etching rate of the NIL photoresist were done. The results show that as the work pressure or the gas flow increase, the etching rate will increase at first, then decrease after it reaches a certain value; when SF6 is added in the etching gas, the undercut will declin, but the rate will also fall down; the etching uniformity is good when adding SF6 in the etching gas and when the gas flow and pressure are high. From the experiment, optimal conditions are obtained, reaction gas O2 ＋ SF6, gas flow were 40 cm^3/min and 5 cm^3/min, work pressure is 9.31 Pa, RF power is 20 W. In the above conditions, the etching rate is stable at about 0. 8 μM/min, and the uniformity is good.
出处
《半导体技术》
CAS
CSCD
北大核心
2010年第4期357-360,共4页
Semiconductor Technology
基金
国家自然科学基金资助项目(60808014)
国家重点实验室基金资助项目(9140C790305090C79)
上海市纳米专项(0852nm06600)
关键词
纳米压印
反应离子刻蚀
去胶速率
正交试验
nano imprint lithography （NIL）
RIE
etching rate of photoresist
orthogonal test
