摘要
比较了248nmKrF光刻工艺与i-Line工艺上的异同,利用工艺原理和光学原理分析了248nmKrF光刻工艺的特点。对一些光刻工艺中容易出现的问题进行了探讨,使248nmKrF光刻技术在实际工艺中可以得到灵活应用。
Some impact factors in the photolithography process between 248nm KrF and i-line process were compared. The characteristics of 248nm KrF were analyzed by process principle and optical principle. The issues in the photolithography process were discussed, it is important for 248nm KrF technology in actual photolithography process.
出处
《半导体技术》
CAS
CSCD
北大核心
2006年第8期569-572,共4页
Semiconductor Technology
关键词
光刻
氟化氪
工艺
photolithography
KrF
process
