摘要
概述了作为下一代光刻技术之一的157nmF2准分子激光光刻技术的进展及各公司157nm曝光设备的开发现状。介绍了157nm光刻中各种制约因素,如CaF2材料的双折射现象、真空环境的排气及污染控制、保护薄膜的选择、折反射光学系统的选择与设计及新型抗蚀剂的开发等问题随着时间的推进已基本得到解决。最后讨论了157nm光刻技术在45nm及以下节点器件图形曝光引入的可能性和采用浸液式157nm光刻进入32nm技术节点器件图形曝光的潜力。
This paper presents the progress of 157 nm F2 excimer laser lithography as one of Next Generation Lithography （NGL） and the development status of several companies＇157 nm exposure tools. Describing various restraint factors in 157 nm lithography, such as the intrinsic birefringence of CaF2material, exhaust purging of vacuum environment and contamination control, pellicles selection, catadioptric optics selection and design, development of new type resists have been basically solved with the lapse of time. Finally discusses the possibility of 157 nm lithography to be selected by 45 nm and below node devices pattern exposure, and the potential of 157 nm immersion lithography to be accessed to 32 nm node devices pattern exposure.
出处
《电子工业专用设备》
2006年第2期13-17,52,共6页
Equipment for Electronic Products Manufacturing
关键词
157
nm光刻
氟化钙材料
局部反射光斑
双折射
折反射光路
保护薄膜
污染控制
浸液式光刻
157 nm lithography
Calcium fluoride material
Local flare
Catadioptric path
Birefingence
Pellicles
Contamination control
Liquid immersion lithography
