摘要
在实验基础上对太阳能级Si片碱性清洗工艺进行了分析,指出碱性清洗液在适宜的工艺环境下,配合超声清洗和表面活性剂的使用可以获得良好的清洗效果。结果表明,表面金属浓度分别达到Cu元素小于1.3×10^(14)atoms/cm^2,Fe元素小于5×10^(13)atoms/cm^2。碱性清洗液与Si晶体发生两步化学反应,平衡后OH^-离子浓度保持稳定,是以获得稳定的清洗效果同时提高清洗液的使用效率。
Alkaline cleaning process for solar-grade silicon wafer is analyzed based on the experiments, it is pointed out that a good cleaning effect of alkaline cleaning solution can be got in the appropriate technology environment with ultrasonic cleaning and surface-active agent. The results show that the surface metal content is limited lower than 1.3 × 10^14 atoms/cm^2 for Cu, 5 × 10^13 atoms/cm^2 for Fe. Alkaline cleaning solution has two-step chemical reaction with Si, equilibrium concentration of OH^- ions remain stable, so stable cleaning effects and high usage efficiency of cleaning solution can be obtained.
出处
《半导体技术》
CAS
CSCD
北大核心
2010年第4期309-312,共4页
Semiconductor Technology
关键词
硅片
碱性清洗
表面活性剂
超声清洗
对太阳能级
silicon wafer
alkaline cleaning
surfactant
ultrasonic cleaning
solar-grade
