摘要
通过结构为ITO/2T-NATA(20nm/NPBx(20nm)/MCzHQZn(30nm)/BCP(10nm)/Alq3(20nm)/LiF(0.5nm)/Al、ITO/2T-NATA(30nm/MCzHQZn(30nm)/BCP(10nm)/Alq3(30nm)/LiF(0.5nm)/Al和ITO/2T-NATA(20nm/MCzHQZn(30nm)/NPBx(16nm)/BCP(10nm)/Alq3(25nm)/LiF(0.5nm)/Al的3组有机电致发光器件(OLED),证明了MCzHQZn既具有空穴传输特性,又具有较好的发光特性。MCzHQZn在器件1中作发光层,器件最大亮度在电压16V时达到3692cd/m2,电压13V时的最大效率为0.90cd/A,发光的峰值波长为564nm;MCzHQZn在器件2中既作发光层又作空穴传输层,器件最大亮度在电压为13V时达到1929cd/m2,电压12V时的最大效率为0.57cd/A,发光的峰值波长也为564nm;MCzHQZn在器件3中作空穴传输层,由NPBx作发光层,器件最大亮度在电压为14V时达到3556cd/m2,电压9V时的最大效率为1.08cd/A,发光的峰值波长为444nm。
Three types of organic light emitting devices with MCzHQZn are imroduced. The structure of device 1 is ITO/2T-NATA （20 nm）/NPBX（20 nm）/MCzHQZn（30 nm）/BCP（10 nm）/Alq3 （20 nm）/ LiF（0. 5 nm）/Al. The structure of device 2 is ITO/2T-NATA （30 nm）/MCzHQZn（30 nm）/BCP（10 nm）/Alq3 （30 nm）/LiF（0. 5 nm）/Al. And the structure of device 3 is ITO/2T-NATA （20 nm）/MC-zHQZn（30 nm）/NPBX（16 nm）/BCP（10 nm）/Alq3 （25 nm）/LiF（0.5 nm）/A1. The results demonstrate that MCzHQZn has hole-transporting character and better luminous character. In device 1 MCzHQZn is emitting layer,the maximum luminance is 3 692 cd/mz at 16 V,the maximum luminous efficiency is 0. 90 cd/A at 13 V. The peak wavelength is 564 nm. In device 2 MCzHQZn are both emitting layer and hole transporting layer,the maximum luminance is 1 929 cd/m2 at 13 V,the maximum luminous efficiency is 0. 57 ed/A at 12 V. The peak wavelength is 564 nm In device 3 MCzHQZn is hole-transporting layer, while NPBX is emitting layer. The maximum luminance is 3 556 cd/m2 at 14 V,the maximum luminous efficiency is 1.08 cd/A at 9 V. The peak wavelength is 444 nm.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2010年第4期496-499,共4页
Journal of Optoelectronics·Laser
基金
国家青年基金资助项目(10804036)
吉林省科技发展计划资助项目(20080528
20082112)
吉林省教育厅"十一五"科学技术研究计划资助项目([2007]154
[2008]155)
四平科技局计划资助项目(四科合字第2005007号
四科合字第2006008号)
