摘要
采用标准的0.13μm CMOS工艺实现了0.5V电源电压,3GHz LC压控振荡器。为了适应低电压工作,并实现低相位噪声,该压控振荡器采用了NMOS差分对的电压偏置振荡器结构,去除尾电流,以尾电感代替,采用感性压控端,增加升压电路结构使变容管的一端升压,这样控制电压变化范围得到扩展。测试结果显示,当电源电压为0.5V,振荡频率为3.126GHz时,在相位噪声为-113.83dBc/Hz@1MHz,调谐范围为12%,核心电路功耗仅1.765mW,该振荡器的归一化品质因数可达-186.2dB,芯片面积为0.96mm×0.9mm。
Implemented in a standard 0. 13μm CMOS process, a 0. 5 V 3 GHz low power voltage controlled oscillator （VCO） is presented. Due to the use of the N-pair only voltage-biased oscillator, two tail inductors instead of the tail current source, the inductive voltage control technique, and a voltage-boosted tuning technique, the VCO measured has a phase noise of -113.83 dBc/Hz at 1 MHz offset from 3. 126 GHz oscillation frequency with 1. 765 mW power dissipation from 0.5 V power supply and approximately 12% tuning range. The figure of merit is -186.2 dB and the chip area is 0. 96 mm×0. 9 mm.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2010年第1期90-93,共4页
Research & Progress of SSE
基金
国家高科技研究发展计划(863计划)资助项目(2008AA04Z309)
