摘要
提出了一种耐压技术——横向变厚度VLT技术,以及基于此技术的一种高压器件结构——变厚度漂移区SOI横向高压器件,借助二维器件仿真器MEDICI,深入研究了该结构的耐压机理。结果表明,变厚度漂移区结构不但可以使横向击穿电压提高20%,纵向击穿电压提高10%,而且可以使漂移区掺杂浓度提高150%～200%,从而降低漂移区电阻,使器件优值提高40%以上。进一步研究表明,对于所研究的结构,采用一阶或二阶阶梯作为线性漂移区的近似,可以降低制造成本,并且不会导致器件性能的下降。
Corresponding to the variation of lateral doping （VLD） technique, a sustaining- voltage technique-variation of lateral thickness （VLT） is developed in this paper. Based on the VLT technique, a new SOl high voltage device with step drift regions is proposed and investigated in detail using the two-dimensional semiconductor simulator MEDICI. The results show that the device with VLT structure is enabled to increase by 20% in lateral breakdown voltage, 10% in vertical breakdown voltage, and 150%-200% in doping concentrations in the drift region. As a result, the body resistance decreases and the Figure of Merit （FOM） increases beyond 40%. The devices with the single or two-step drift regions have the cost-effective merits due to the insensitivity of process conditions and the elimination of the high temperature annealing. At same time, the approximately ideal breakdown voltage and drift resistance are still maintained.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2010年第1期42-46,79,共6页
Research & Progress of SSE
基金
国家自然科学基金(60806027)
中国博士后基金(20070411013)
江苏省自然科学基金(BK2007605)
电子薄膜与集成器件国家重点实验室开放基金(KF2007001)
关键词
绝缘层上硅
击穿电压
漂移区电阻
横向变掺杂
横向变厚度
SOI
breakdown voltage
drift resistance
variation of lateral doping
variation of lateral thickness
