摘要
采用反应直流磁控溅射镀膜法,在氮气分压为0.9Pa、不同基底温度下、玻璃基底上制备了纳米多晶Cu3N薄膜,并研究了基底温度对薄膜结构和性能的影响。结果表明,当基底温度为100℃及以下时,薄膜以[111]方向择优生长为主;在150℃及200℃时,薄膜以[100]方向择优生长为主;250℃时开始出现Cu的[111]方向生长,300℃时已完全不能形成Cu3N晶体,只有明显的Cu晶体。随基底温度的升高,薄膜的沉积速率在13～28nm/min呈U型变化,低温和高温时较高,150℃时最低;薄膜的电阻率显著降低;薄膜的显微硬度先升后降,100℃时显微硬度最大。
Copper nitride thin films are deposited on glass substrates by reactive DC magnetron sputtering at 0. 9Pa N2-gas partial pressure and different substrate temperatures. The different substrate temperatures on the structures and properties of copper nitride thin films have been investigated. The preferred crystalline orientation of the films changes with the substrate temperature as [1Ill-oriented at 50~C, 100~C and [-100J-oriented at 150~C, 200~C, 250~C, and reach 300~C the all XRD peaks of CuaN can not be observed, but the peaks of Cu can be noticed clearly, these results indicate that 300℃ substrate temperature is too high for the nitrification of Cu. The substrate temperature not only affects the crystal structure of the Cu3 N films but also affects its deposition rate, resistivity and microhardness. In experimental condition, the deposition rate of Cu3N films is 13-28nm/min and changes with the increasing substrate temperature like U, there is high deposition rate with the low and high substrate temperature but there is a minimum deposition rate with 150℃ substrate temperature. The resistivity of Cu3 N films decreases monotonously with the increasing substrate temperature. The microhardness of films changes with the increasing substrate temperature, there is a maximum microhardness 100℃ substrate temperature.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2010年第4期90-93,共4页
Materials Reports
基金
国家民委重点项目(08HB05)
湖北省教育厅项目(B20082902)
南京邮电大学项目(NY208025)
关键词
氮化铜薄膜
直流磁控溅射
基底温度
热稳定性
CuaN films, DC magnetron sputtering, substrate temperature, thermal stability
