摘要
采用反应射频磁控溅射法,通过改变混合气体(N2+Ar)中氮气分压来改变元素的沉积能量和密度,在玻璃基底上制备出了表面光滑、致密的氮化铜(Cu3N)薄膜,研究了不同氮气分压对Cu3N薄膜的择优生长取向和晶粒尺寸的影响.结果表明:随着氮气分压的增加,Cu3N薄膜由沿(111)晶面择优生长转变为沿(100)晶面择优生长,晶粒尺寸变小,表面均方根粗糙度和光学带隙Eopt增大;薄膜在300℃的条件下会完全分解成铜和氮气;薄膜表面的Cu元素以+1价形式存在,Cu2p3/2,Cu2p1/2和N1s峰分别位于932.7,952.7和397.3 eV.
Copper nitride （Cu3N） thin films deposited on glass substrates were successfully prepared using a reactive radio-frequency （RF） magnetron sputtering by changing Nitrogen partial pressure in a mixture gas of nitrogen and argon. The influence of nitrogen partial pressure on the preferential crystalline orientation and the mean crystalline grains size were studied. The results show that the preferential orientation of Cu3N films changes from （111） to （100） and the grain size gradually decrease with the increasing of N2 partial pressure. All the Cu3N films deposited have smooth surfaces with dense and continuous microstructure. The thermal decomposition of the Cu3N film will take place at about 300℃ in vacuum. The binding energy of Cu2p3/2, CU2p1/2 and Nls in Cu3N compound were located at 932.7, 952.7 and 397.3 eV, respectively.
出处
《中国矿业大学学报》
EI
CAS
CSCD
北大核心
2008年第2期276-280,共5页
Journal of China University of Mining & Technology
基金
甘肃省自然科学基金重点项目(ZS021-A25-022-C)
关键词
氮化铜薄膜
射频磁控溅射
表面形貌
择优取向
copper nitride film
RF magnetron sputtering surface morphology
preferential orientation
