摘要
讨论了毫米波低噪声PHEMT的设计要点藉助Schroedinger／Poisson方程及器件方程，进行了Ka波段AlGaAs／InGaAs低噪声PHEMT用异质层结构的数值计算及CAD优化．确定出分子束外延MBE时诸层的最佳组分。浓度与厚度上述优化分析的结果用于器件的实验研制，取得了34．4Gfu下噪声系数（NF）1．92dB、相关增益Ga6．
The design keys for mm-wave low-noise PHEMT have been discussed in detail. By use of Schroedinger-/Poisson equation and the well-known device equations, numerical calculation and CAD optimization for the hetero-layer-structure parameters of the device have been completed. Therefore, theoptimized composition, doping level and thickness of the hetero-layers have been determined. Based on the analysis, the developed device has the performance: NF of 1. 92 dB with Ga of 6. sclB at 34z.4Gfu, which is the best result so far in China.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1998年第11期120-123,共4页
Acta Electronica Sinica
关键词
优化
低噪声
PPHEMT
异质材料
结构
AlGaAs/InGaALs low-noise, PHEMT, CAD Schroedinger/Poisson equation solver,Optimization
