摘要
运用红外反射谱，背散射谱和二次离子质谱等方法研究ＨｇＣｄＴｅ注入Ｂ、Ｐ、Ｉｎ和Ａｓ等元素的掺杂与损伤特性。
The methods of infrared reflective spectra(IRRS), Rutherford back scatting(RBS) and secondary ion mass spectrometry(SIMS) were used to study doping and damging effects on HgCdTe, which is induced through B +,P +,In + and As + ions implantation.
出处
《红外技术》
EI
CSCD
北大核心
1998年第6期22-24,共3页
Infrared Technology
