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带有电流告警的平衡式低噪声放大器的设计仿真与实现 被引量:1

Design and Implementation of Balanced Low-Noise Amplifier with Current Alarm
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摘要 给出了一种带有电流告警的集成低噪声放大器的设计方案和测试结果,采用集总元件和微带线混合匹配的网络,利用ADS软件完成设计和仿真。放大器在1710~1780MHz频率范围内,增益为16.5±0.5dB,噪声系数小于1dB,回波损耗大于20dB。测试结果满足给定指标的要求,证明了该设计方案的可行性。 A design scheme and test results of an integrated low noise balanced amplifier with current alarm are described.Matched networks are designed using a micro-strip and lumped elements structure.Circuit design and simulation are performed with ADS.The amplifier provides a gain of 16.5±0.5 dB,return loss of-20 dB and a noise figure below 1 dB in the frequency range of 1710~1780 MHz.Test results show that the circuit has met the specifications.
出处 《电子器件》 CAS 2009年第4期762-766,770,共6页 Chinese Journal of Electron Devices
关键词 平衡式放大器 噪声系数 电流告警 balanced amplifier noise figure current alarm
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参考文献11

  • 1王良江,冯全源.1.8GHzCMOS有源负载低噪声放大器[J].电子器件,2005,28(3):494-496. 被引量:4
  • 2Deal W R,Biedenbender M,Liu P H,Namba C,Chen S.Broadband Dual-Gate Balanced Low Noise Amplifiers[C]//Compound Semiconductor Integrated Circuit Symposium,2006 IEEE,Nov.2006,169-172. 被引量:1
  • 3Kerr A R.On the Noise Properties of Balanced Amplifiers[J].Microwave and Guided Wave Letters,IEEE[see also IEEE Microwave and Wireless Components Letters],Nov.1998,8 (11):390-392. 被引量:1
  • 4Challal M,Azrar A,Bentarzi H,Recioui A,Dehmas M,Janvier D V.On Low Noise Amplifier Design for Wireless Communication Systems[C]//Information and Communication Technologies:From Theory to Applications,2008.ICTTA 2008.3rd International Conference,7-11 April 2008 Page(s):1-5. 被引量:1
  • 5Halim M H C,Othman A R,Sahingan S A,Selamat M F,Aziz A A A.5-6 GHz front end Low Noise Amplifier[C]//Applied Electromagnetics,2007:APACE 2007.Asia-Pacific Conference,4-6 Dec.2007 Page(s):1-5. 被引量:1
  • 6Liao S.Microwave Devices and Circuits[M].Prentice-Hall,1990; 3ed,Page(s):154-156. 被引量:1
  • 7Chong T,Rendava S.Design and Performance of a 1.6-2.2 GHz Low-Noise,High Gain Dual Amplifier in GaAs EpHEMT[C]//Microwave Conference Proceedings,2005.APMC 2005.Asia-Pacific Conference Proceedings; Volume 3.Dec.2005:4~7. 被引量:1
  • 8刘长军.射频通信电路设计[M].科学出版社.292-294. 被引量:1
  • 9Agilent ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet. 被引量:1
  • 10清华大学编写组.微带电路[M].人民邮电出版社.111-114. 被引量:1

二级参考文献8

  • 1Wu Y C,Chang M F. On-chip high-Q transformer-type spiral inductors[J]. IEE Electronics Letters,2002,38(3):112-113. 被引量:1
  • 2Curtis Leifso, et al. Monolithic Tunable Active Inductor with Independent Q Control[J]. IEEE trans Microwave Theory Tech,2000,48:1024-1029. 被引量:1
  • 3Huang J C, et al. A 2V 2.4 GHz Fully Integrated CMOS LNA with Q-enhancement Circuit[C].In:APMC 2001,2001,3:1028-1031. 被引量:1
  • 4Razavi B,Yan R H,Lee K F. Impact of distributed gate resistance on the performance of MOS devices[J] IEEE Trans on Circuits and Systems I,1994,41(11):750-754. 被引量:1
  • 5Guo Wei, Huang Daquan . The noise and linearity optimization for a 1.9-GHz CMOS low noise amplifier[C]. In:2002 IEEE Asia-Pacific Conference on Proceedings, 2002, 253-257. 被引量:1
  • 6M.Berroth,Pascht A. A CMOS low noise amplifier at 2.4 GHz with active inductor load[C].In: Silicon Monolithic Integrated Circuits in RF Systems, 2001, 1-5. 被引量:1
  • 7A. Niknijad, R. Meyer. Analysis, Design and Optimization of Spiral Inductors and Transformers for Si RFIC's [J].IEEE JSSC,1998,33(10):1470-1481. 被引量:1
  • 8Jie Long, et al. A 2.4GHz sub-1 dB CMOS low noise amplifier with on-chip interstage inductor and parallel intrinsic capacitor[C]. In:IEEE RAWCON, 2002, 165-168. 被引量:1

共引文献3

同被引文献5

  • 1Shumaker J,Basset R,Skuratov A.High-Power GaAs FET Amplifiers:Push-Pull Versus Balanced Configurations[J].Appl.Microwave Wireless,2002:26-32. 被引量:1
  • 2Kim Ki Ho,Lee Yu Ri,Joo Ji Han.2.7-3.1 GHz,1.5 kW Pulsed Solid-State Power Amplifier with Automatic Gain Equalization Circuit for Radar Application[C]//Radar Conference,2007 IEEE 17-20 April 2007:1044-1048. 被引量:1
  • 3Vendelin G D.Design of Amplifiers and Oscillators by the S-Parameter Method[M].John Wiley,New York,1982. 被引量:1
  • 4Liao S.Microwave Devices and Circuits[M].Prentice-Hall,1990;3ed:154-156. 被引量:1
  • 5Chong T,Rendava S.Design and Performance of a 1.6-2.2 GHz Low-Noise,High Gain Dual Amplifier in GaAs E-pHEMT[C]//Microwave Conference Proceedings,2005.APMC 2005.Asia-Pacific Conference Proceedings;Volume,2005,4(3):4-7. 被引量:1

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