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退火气氛对ZnO∶N薄膜的光电性质影响 被引量:1

The Effect of Annealing Atmosphere on the Optoelectric Properties of ZnO∶N Film
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摘要 研究了退火气氛对ZnO∶N(氮掺杂的氧化锌)薄膜的光电性质影响。结果发现,n型电导原位生长的ZnO∶N薄膜样品,经过600°CO2气氛下退火后,样品A表现为p型电导特征;而经过600°CN2气氛下退火后,样品B仍然表现为n型电导特征。低温光致发光光谱(PL)测试表明,样品A和样品B的发光光谱最大的差别为样品A的低温发光光谱中具有与受主相关的发光峰,峰位位于3.348 eV;样品B的低温发光光谱中具有与施主相关的发光峰,峰位位于3.358 eV。 In this paper, the effect of annealing atmosphere on the optical and electrical properties of ZnO : N film is investigated. The results indicate that the as-grown n-type ZnO : N film shows a p-type conductivity after 600℃ annealing in the O2 flow(sample A); however, the as-grown n-type ZnO : N film behaves a n-type conductivity after 600℃ annealing in the N2 flow(sample B). The measurement of PL(80 K) indicates that the most significant difference of the emission bands of sample A and sample B is that, the PL emission band in sample A is ascribed to neutral acceptor-bound excitation emission with the bound located at 3. 348 eV, while the PL emission band in sample B is ascribed to donor-bound excitation emission, with the bound located at 3. 358 eV.
出处 《上海电机学院学报》 2009年第3期204-207,共4页 Journal of Shanghai Dianji University
基金 国家自然科学基金资助项目(10804071) 上海高校选拔培养优秀青年教师科研专项基金资助项目(sdj-08013) 上海电机学院博士科研启动基金资助项目(08C409)
关键词 退火 光电特性 发光光谱 annealing optoelectric property PL spectra
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