摘要
磷是多晶硅中的一种主要杂质元素,目前国内外采用冶金法除磷的工艺主要包括酸洗除磷、合金定向凝固除磷和真空除磷工艺。其中,酸洗除磷工艺可以很有效地去除磷杂质,但仍未达到太阳能级多晶硅小于0.1×10-4%(质量分数)的要求。采用合金定向凝固工艺可以去除80%以上的磷杂质,但目前对凝固后硅中残留溶剂金属的去除方法还有待进一步的研究。通过真空感应熔炼实验已将磷含量从15×10-4%(质量分数)降低至0.8×10-5%(质量分数),并对除磷的热力学条件进行了初步探索。
Phosphorus is one of the main impurities of silicon. The present domestic and foreign research progresses on phosphorus removal from silicon by metallurgical method mainly include acid leaching, alloy unidirectional solidification and vacuum refining processes. Phosphorus can be removed effectively by acid leaching but still not achieving the target of SOG-Si by less than 0. 1×10^-4%（mass）. More than 80% of phosphorus can be eliminated by alloy unidirectional solidification also; however more research should be done for the removal of the residual solvent metal in silicon ingot. Our research on phosphorus removal by vacuum induction smelting process has succeeded in decreasing phosphorus from 15×10^-4% （mass） to 0. 8 ×10^-5% （mass）, at the same time the relative thermodynamics of phosphorus removal are also discussed.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2009年第19期11-14,19,共5页
Materials Reports
基金
福建省自然科学基金重点项目(E0720001)
福建省重大科技专项(2007HZ0005-2)
关键词
多晶硅
冶金法
除磷
polysilicon, metallurgical method, phosphorus removal
