摘要
采用VHF-PECVD技术在玻璃衬底上沉积微晶硅锗薄膜。研究了衬底温度对微晶硅锗薄膜的微结构和光电特性的影响。结果表明:随着衬底温度的升高,微晶硅锗薄膜的生长速率减小,(220)晶向强度增强;而同一衬底温度下,锗浓度的增加将抑制薄膜(220)晶向的生长,通过相应地提高衬底温度可以解决这一问题。利用生长基团在薄膜生长表面的扩散理论对实验结果进行了解释。
Microcrystalline silicon-germanium films were prepared by very high frequency plasma enhanced chemical vapor deposition （VHF-PECVD） on the glass. The microstructures and optoelectronic properties of μc-SiGe thin films prepared at different substrate temperatures were investigated. The results indicate that the crystalline textile degree enhances with the increase of substrate temperature, however, the increasing of geranium content can restrain （220） growth of crystalline grains. The results are explained by the diffusion theory of growth precursor on the surface of thin films.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2009年第4期831-835,共5页
Journal of Synthetic Crystals
基金
国家高技术研究发展计划(No.2009AA05Z422)
天津市应用基础及前沿技术研究计划(No.08JCZDJC22200)
科技部基础研究973项目(No.2006CB202602No.2006CB202603)
关键词
氢化微晶硅锗薄膜
衬底温度
光、暗电导率
hydrogenated microcrystalline silicon-germanium
substrate temperature
photo- and dark-conductivity
