摘要
对在不锈钢和玻璃衬底上沉积的μc-Si：H薄膜进行了拉曼光谱和扫描电子显微(SEM)分析。拉曼分析显示在相同的工艺参数下,玻璃衬底上沉积的μc-Si：H薄膜的晶化率高于不锈钢衬底上沉积的薄膜,这可能是由于衬底与等离子体之间的电势差不同和衬底表面形貌两方面所致。SEM观察表明玻璃衬底上沉积的μc-Si：H薄膜由尺寸介于200～100nm的团簇构成。
The microstructure of μc-Si：H films deposited on glass and stainless steel substrates were analyzed by Raman spectroscopy and Scan Electron Microscopy （SEM）. The Raman spectroscopy revealed that the crystalline volume fraction of μc-Si：H film deposited on glass substrate was higher than that of film deposited on stainless steel substrate at same deposition condition, it may be caused by the deferent electric potential between plasma and substrate and surface characteristics of substrates. The films deposited on glass substrate possessed orderly arranged cluster feature in the size of 200 - 100 nm was observed by SEM.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2006年第2期116-120,共5页
Acta Energiae Solaris Sinica
关键词
等离子体辅助化学气相沉积
拉曼散射谱
晶化率
团簇
plasma enhanced chemical vapor deposition （PECVD）
raman scattering spectroscopy
crystalline volume fraction
cluster
