摘要
制作了发射极面积为1μm×15μm×4指的InP DHBT器件,器件拓扑使用了共基极和共发射极两种结构,通过负载牵引测试系统对器件功率特性进行测试。在功率优化匹配条件下,所测得最大输出功率密度和相应的功率附加效率(PAE)在10GHz下为1.24W/mm和50%,在18GHz下的数据为0.82W/mm和26%。测试同时表明,共发射极结构相对稳定和易于匹配,共基极模式具有更大的输出功率潜力,但需要进一步解决难于匹配、容易振荡和寄生参量影响等问题。在功放电路设计中,可以根据不同需求选择合适的电路拓扑结构。
Two types of InP based DHBTs in CB and CE configurations were designed and fabricated. The two DHBTs have the same emitter area of 1 μm × 15μm× 4. The power performances were characterized by a load-pull power measurement system. The maximum output power density and PAE is 1.24 W/mm, 50% at 10 GHz and 0.82 W/mm, 26% at 18 GHz. The results show that InP DHBTs are suitable for medium power amplifiers. The comparison results between the two configurations indicate that CE device is more stable and easy to match, and the CB one may have more aggressive power applications potential but extra efforts are needed on impedance matching, parasitic and oscillation eliminating. Designers can select proper topology for different design requirements.
出处
《半导体技术》
CAS
CSCD
北大核心
2009年第8期759-762,共4页
Semiconductor Technology
