摘要
介绍了基于InOx纳米岛/C的栅控薄膜电子发射阴极,并对其制备工艺和发射性能进行讨论。引入射频溅射的ZnO作为通道层,并在其上沉积InOx纳米岛以及无定型碳薄膜层。InOx纳米岛状结构引入了InOx/C复合活性层的不均匀性;在栅极以及源漏极电压的作用下,当有足够的传导电流通过InOx/C复合层时,通过电流热效应作用,复合层的某些导电通道被烧断,形成电子发射区域。本结构可以通过栅极电压来控制传导电流的有无,从而控制阴极电子发射的有无。
Gate controlled thin film electron emission cathode based on InO; nanoislands/C is reported, and its fabrication technology and characters are studied. RF sputtered ZnO is used as channel layer. Amorphous carbon film on InOx nanoislands is deposited on the channel layer. With the ununiformity introduced by InOx nanoislands, when enough current density is applied in the InOx nanoislands/C composed layer, some local gaps are formed instantaneously in the composed layer by current heating effect and these gaps become electron emitting area. With this structure, the conduction current can be controlled by the gate voltage; so the electron emission from the cathode can be controlled by the gate voltage.
出处
《真空电子技术》
2009年第3期44-46,59,共4页
Vacuum Electronics
基金
国家自然科学基金(No.60571015/F010501)
关键词
平面显示
栅控
电子发射
InOx纳米岛
C
Flat panel display
Gate control
Electron emission
InOx nanoislands
C
