期刊文献+

表面传导电子发射显示器件概述及研究现状 被引量:2

A Summary and Research Situation of Surface-Conduction Electron-Emitter Display
下载PDF
导出
摘要 表面传导电子发射显示(SED)是一种新型平板显示技术,跟现有主流显示技术相比,它在对比度、灰度级、色彩、动态响应及功耗等方面均有优势。本文在简单叙述了SED的发展历史、原理及结构之后,重点介绍了SED的技术核心——电子发射源的结构、各种工艺流程及最新进展,最后是对SED的性能和特点的简介以及市场展望。 Surface-conduction electron-emitter display(SED) is a new kind of flat panel display technology.Compared with the existing main stream technology,the SED has great advantage in many aspects such as contrast,gradation levels,colors,dynamic response as well as power consumption.In this article,after presenting the development history,the principles and main structure of SED in brief,the structure,various process flows and latest developments about the surface conduction electron-emitter,which is the core technology of SED,are demonstrated emphatically,followed by the performances,characteristics and marketing foreground of SED in the end.
出处 《真空电子技术》 2010年第3期33-37,46,共6页 Vacuum Electronics
关键词 表面传导电子发射显示 电子发射源 平板显示 SED Electron-emitter Flat pael display
  • 相关文献

参考文献26

  • 1Elinson M I. The Emission of Hot Electrons and the Field Emission of Electrons from Tin Oxide[J]. Radio Engineering and Electronic Physics, 1965, (7): 1290- 1296. 被引量:1
  • 2Sakai K, Nomura I, Yamaguchi E, et al. Flat Panel Displays Based on Sur{ace-Conduction Electron Emitters [J]. Proc Euro Display, 1996,96:569-572. 被引量:1
  • 3Yamamuchi E, Sakai K, Nomura I, et al. A 10-inch Surface-Conduction Electron-Emitter Display [J]. Journal of the Society for Information Display, 1997,5 (4) 345. 被引量:1
  • 4Canon and Toshiba Go Their Own Way In Flat Panels [J]. IEEE Spectrum, 2004:24-28. 被引量:1
  • 5Kobayashi S, Furuse T, Yuasa S, et al. Method for Forming an Electron Emitting Device Using a MetalContaining Composition[P]. US:6270389, 2001-8-7. 被引量:1
  • 6富田康子,下田卓.电子发射元件的制造方法和图像显示装置的制造方法[P].中国:03152420.6,2004-03-03. 被引量:1
  • 7[日]大西敏一,山野边正人,野村一郎,等.电视机及图像显示装置[P].中国:200610100715.X,2006-12-30. 被引量:1
  • 8[日]下田卓,寺田匡宏,森省诚.表面传导型电子发射元件及图像形成装置的制造方法[P].中国专利:200310102497.X,2004-05-26. 被引量:2
  • 9[日]岩城孝志,水野事占信,柴田雅章,等.电子发射器件,电子源,以及制造图像形成装置的方法[P].中国专利:200410047344.4,2004-11-17. 被引量:2
  • 10应根裕.36英寸表面传导电子发射显示器[J].现代显示,2005(10):37-41. 被引量:4

二级参考文献32

  • 1杰瑞.SED显示原理[J].电器评介,2004(12):10-11. 被引量:4
  • 2守真.虎视平板电视市场的SED电视机[J].视听技术,2005(3):19-21. 被引量:2
  • 3吴凯,李德杰.一种新型的表面传导电子发射阴极[J].真空科学与技术学报,2006,26(5):339-342. 被引量:8
  • 4[1]Elinson M I,Zhdan A G,Kudintseva G A,et al.The Emission of Hot Electrons and the Field Emission of Electrons from Tin Oxide[C].Radio Eng Electron Physics,1964,10:1290-1296. 被引量:1
  • 5[2]Kumar N.Method of Making a Field Emitter[P].US Patent:5679043,1997-10-21. 被引量:1
  • 6[3]Kumar N.Field Emission Display Device[P].US Patent;5763997,1998-06-09. 被引量:1
  • 7[4]Oguchi T,Yamaguchi E,Sasaki K,et al.A 36-inch Surface-Conduction Electron-Emitter Display(SED)[C].SID 05 DIGEST,2005.1929-1931. 被引量:1
  • 8[5]Yamamoto K,Nomura I,Yamazaki K,et al.Fabrication and Characterization of Sudace Conduction Electron Emitters[c].SID 05 DIGEST,2005,1933-1935. 被引量:1
  • 9[6]Sakai K,Nomura I,Yamaguchi E,et al.Flat-Panel Displays Based on Sudace-Conduction Electron Emitters[C].Proc EuroDisplay,1996.569-572. 被引量:1
  • 10T. Oguchi etc. A 36-inch Surface-conduction Electron-emitter Display (SED) [C]. SID 05 DIGEST, 2005: 1929-1931. 被引量:1

共引文献15

同被引文献36

  • 1虞献文,陈燕艳,应桃开,程存归,郁可,朱自强.多孔硅新的表面处理技术[J].Journal of Semiconductors,2005,26(2):406-409. 被引量:5
  • 2王红光,黄浩,李德杰,华缜,刘红君.场发射显示技术的发展状况[J].真空电子技术,2006,19(5):33-38. 被引量:3
  • 3王水凤,戴丽丽,元美玲.阴极还原处理对多孔硅发光性能的影响[J].南昌大学学报(理科版),2007,31(2):174-176. 被引量:1
  • 4Sheng X,Koyama H,Koshida N.Efficient Surface-Emitting Cold Cathodes Based on ElectroluminescentPorous Silicon Diodes[J].J Vac Sci Technol,1998,B16(2):793-795. 被引量:1
  • 5Komoda T,Honda Y,Koshida N,et al.Fabrication ofBallistic Surface-Emitting Display on Glass Substrate[C].SID 01DIGEST,2001:188-191. 被引量:1
  • 6Komoda T,Honda Y,Koshida N,et al.Fabrication ofA 7.6-In.-Diagonal Prototype Ballistic Electron Surface-Emitting Display on a Glass Substrate[J].Journal ofThe SID,2004,12(1):29-35. 被引量:1
  • 7Ichihara T,Hatai T,Koshida N.Direct Excitation ofXenon by Ballistic Electrons Emitted from Nanocrystal-line Silicon Planar Cathode and Vacuum-UltravioletLight Emission[C].Proc IDW'08,2008:1363-1366. 被引量:1
  • 8Yue W K,Parker D L,Weichold M H.Porous SiliconElectron-Emitting Source[C].IDEM’90 Tech Dig,1990:167-170. 被引量:1
  • 9Kojima A,Koshida N.Ballistic Transport Mode Detec-ted by Picosecond Time-of-Flight Measurements forNanocrystalline Porous Silicon Layer[J].Appl PhysLett,2004,86(022102):1-3. 被引量:1
  • 10Smith R L,Collins S D.Porous Silicon FormationMechanisms[J].J Appl Phys,1992,71(8):R1-R22. 被引量:1

引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部