摘要
研究了外延法生长金刚石薄膜的场发射特性.金刚石薄膜用热丝CVD法生长,甲烷与氢气比例为2.5%,生长于事先电泳沉积在硅衬底的金刚石微晶上.实验数据的计算结果表明:金刚石薄膜的阈值电压为1.8V/μm,有效功函数降低为纯金刚石颗粒的0.11倍.通过SEM、XRD和Raman等手段表征了金刚石薄膜的结构,并对其场发射机制作出理论分析.
The diamond films were propared with CVD and its properties of field emission were studied. SEM,XRD, Raman spectroscopy were employed in order to determine samples surface morphology,crystal orientation,and quality of the films. Results,show that,at the pressure of 10 4 Pa,emission can be obtained at field as low as 1.8 V/μm. According to experimental results, theoretical explanation to electron behavior was given.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2009年第6期1349-1352,共4页
Acta Photonica Sinica
基金
国家自然科学基金(50072029和50572101)资助
关键词
场发射
金刚石
外延法
非晶碳
Field emission
Diamond films
Epitaxy method
Amorphous carbon
