摘要
利用脉冲激光烧蚀技术在硅衬底上制备了类石墨薄膜,以该薄膜为阴极进行了场致电子发射实验。当在阴阳极之间加电场后,两极之间出现了放电现象。放电之后,类石墨薄膜的阈值电场大大降低了。当电场为20V/μm时,该薄膜的发射点密度可以达到106/cm2。利用Raman光谱、扫描电镜和X射线光电子谱对薄膜的表面形貌和微结构进行了测试。薄膜中的类石墨微结构对该薄膜的场致电子发射特性起了促进作用。场致电子发射实验显示类石墨薄膜作为冷阴极电子材料具有潜在的应用价值。
The graphite-like film was prepared on silicon substrate by pulsed laser ablation, and the field electron emission from the film was measured. After arc discharges between the graphite-like film cathode and the indium-tin-oxide (ITO) glass anode, the turn-on field of the graphite-like film decreases. The emission site density is in an order of 10~6/cm^2 at an applied field of 20 V/μm. The morphology and the structure of the graphite-like film were measured by using Raman spectroscopy, scanning electron microscopy(SEM) and X-ray photoelectron spectroscopy (XPS). The surface structures of the film before and after the field emission measurement were investigated. The field electron emission measurement indicates that this kind of film can be a new cold cathode material.
出处
《液晶与显示》
CAS
CSCD
2004年第4期244-248,共5页
Chinese Journal of Liquid Crystals and Displays
基金
SupportedbyNationalNaturalScienceFoundationofChina (No .60 2 780 3 5 )
ExcellentYouthTeacherFoundationofHenanProvinceandZhengzhouUniversity
