摘要
深入研究了牺牲层腐蚀机制,摸索出完整的台面自停止工艺并实际应用于OEIC器件制作。实验中发现了侧蚀、台面变形以及表面清洁等问题。从实验现象着手分析,并由此对工艺进行了改进,采用了新的腐蚀剂和工艺步骤。改进后的工艺解决了上述问题,可以完全满足后续工艺的要求。
The etch-stop process is developed completely and applied to the fabrication of OEIC （Optoelectronic Integrated Circuits） through deeply studying the mechanism of sacrificial layer etching. The problems such as side etching, mesa deformation and surface cleaning etc in the experiment are found. The key point of the problems is analyzed through the studying of experiments and the standard process is improved including new etchant and new technological process. All the problems are solved by improved process and it can be applied to the following process completely.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2009年第2期241-244,共4页
Research & Progress of SSE
基金
单片集成电路与模块国家级重点实验室基金(No.9140C1406020708)
