摘要
本文介绍高精度控制 Si 膜厚度的电化学腐蚀自停止新技术。讨论光照和电极欧姆接触等对腐蚀特性的影响,以及所得 Si 膜的质量。
Novel technique of electrochemical etch-stop for high-precision thicknesscontrol of silicon membrane was presented in this paper.The influences of light irradiationand ohm contact of electrode on etch characterization were discussed.Quality of the siliconmembranes were reported.
关键词
电化学
腐蚀
薄膜
制备
Si膜
electrochemical etch
etch-stop
membrane
sol material
