摘要
存储中Si片起"雾"是Si片存储面临的最大挑战,"雾"缺陷是可见或可印刷的晶体结构,从污染生长而来,已是困扰半导体业界长达10年以上的大问题。半导体制造商们至今还未能提出良好的解决方案。所以研究Si片的"雾"缺陷,并克服"雾"缺陷显得尤为迫切。从实际生产出发,根据实验数据分析和理论推导,建立了一个起"雾"原因基本模型,对引起"雾"缺陷影响因素进行了独立细致的分析,并在这个模型的基础上提出了相对应的有效的解决方案。
The ＂haze＂ appeared on the surface of silicon wafer is the key challenge in silicon storage. ＂Haze＂ defect is a visible or printable crystalline structure for contamination which is a big problem, and perplexes semiconductor industry for more than ten years. However, the semiconductor producers have no good solution to this problem. Therefore, it is urgent to study and solve ＂haze＂ defects, so a model of ＂haze＂ generation was built based on the theoretical analysis and experimental data, and every factor to ＂haze＂ problem was analyzed specifically. According to this model, an effective solution was proposed.
出处
《半导体技术》
CAS
CSCD
北大核心
2009年第4期337-340,共4页
Semiconductor Technology
关键词
时间雾
携带层
气载分子污染
温湿度
time-dependent haze
carrying layer
AMC （airborne molecular contamination） pollution
temperature and humidity
