摘要
目前，微波低噪声放大器设计中采用的Ｒｎ－Ｇｎ噪声模型只适用于高频、窄带和源导纳（Ｇｓ≠０）情况，其应用范围有限，特别是不适用于低频段的低噪声放大器设计。本文对文献［１］提出的Ｅｎ－Ｉｎ噪声模型作了改进，使其不仅适用于高频、窄带，而且也适用于低频、宽带放大器的低噪声设计。进而推导出放大器Ｅｎ－Ｉｎ噪声模型与Ｒｎ－Ｇｎ噪声模型的等价关系，给出放大器Ｅｎ－Ｉｎ噪声模型的测量方法及实测结果。
The RnGn noise model used in microwave lownoise amplifier design can be only used in the case of high frequency,narrow band and source conductance (Gs≠0). Its application scopes are limited. Especially it can not be used in low frequency lownoise design of an amplifier. This paper has improved the EnIn noise model proposed in reference so that it can be used not only in high frequency and narrow band,but also in low frequency, wide band and source reactance amplifier lownoise design. In addition, the equivalent relation between EnIn noise model and RnGn noise model is derived, and the measurement method of EnIn noise model parameters and the measurement results are given.
出处
《通信学报》
EI
CSCD
北大核心
1998年第2期80-84,共5页
Journal on Communications
基金
国家自然科学基金
吉林省科委应用基础基金
关键词
噪声模型
低噪声
设计
放大器
noise model, lownoise design, spectral correlative coefficient, equivalent relation
