摘要
本文针对目前使用的晶体管ＥｎＩｎ噪声模型及其测量方法的不足之处，提出改进方案，并给出精确测量噪声模型参数的方法。根据误差分析，提出测量谱相关系数的源阻抗选择规则，并对低噪声放大器进行实际测量，给出适合于低噪声电路设计的三维ＦＺｓ图形。
In this paper, the weaknesses of the E n I n noise model of transistor which is widely used in low frequency and its measurement methods are analyzed, and the improved scheme and more accurate measurement methods are put forward. According to error analysis theory, to improve the measuring accuracy of spectral correlative coefficients, the selection rules of source resistance and source reactance are also given. By means of above methods a commercial low noise transistor is tested, and the 3 dimension F Z s diagram suitable for low noise circuit design is presented.
出处
《计量学报》
CSCD
北大核心
1997年第4期300-307,共8页
Acta Metrologica Sinica
基金
国家自然科学基金
吉林省科委应用基础基金
关键词
晶体管
低频噪声模型
噪声测量
Transistor
Low frequency noise model
Noise measurement
