摘要
采用聚硅氮烷前驱体在高温常压下热裂解的方法制备了3C-SiC纳米棒,在室温下观察到来自纳米棒的378nm(3.3eV)强紫外发射.利用扫描电子显微镜、透射电子显微镜、高分辨透射电子显微镜和X射线衍射对样品的形貌和结构进行表征,观察到在该结构中存在类似6H-SiC结构的三层堆垛层错.利用室温荧光光谱和室温荧光衰减曲线研究了强紫外发射的产生机理,紫外发射来源于3C-SiC纳米棒中的三层堆垛层错的发光.
Silicon carbide（SiC）nanorods were synthesized via catalyst-assistant crystallization of amorphous silicon carbonitride.An intensive sharp photoluminescence peak at 378nm was observed from the SiC nanorods.SEM,TEM,HRTEM and XRD was used to characterize the structure.XRD pattern showed that the nanorods are pure 3C-SiC containing stacking faults.The HRTEM image showed that the stacking faults were threefold stacking faults,which resembled the structure of 6H-SiC.We attribute the emission to these stacking faults,and discussed the emission mechanism.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2009年第4期2594-2598,共5页
Acta Physica Sinica
基金
中国科学院“百人计划”
国家自然科学基金(批准号:50372031)
国家科技支撑计划(批准号:2006BAK07B04)
公安部应用创新计划(批准号:2007YYCXGADX101)资助的课题~~
