摘要
设计并用分子束外延(MBE)法制备了不同沟道结构的GaAs PHEMT材料,采用高分辨率X射线双晶衍射仪(DCXRD)、应力测试仪和霍尔测试仪对样品的结晶质量、薄层组分和厚度偏差、应力以及电子迁移率进行了分析表征。探讨了外延片应力与沟道结构的相关性,研究了沟道失配应力对电性能的影响机理。建立了GaAs PHEMT材料热应力引起电子传输特性退化的试验方法,进行了高温和低温存储后材料电性能的演化行为测试,并归纳了热应力引起材料电特性退化的实验结果。结果表明GaAs PHEMT材料经高、低温存储并恢复室温后仍能保持原有电性能,沟道应力对材料电性能的影响主要表现为失配应力。
GaAs pseudomorphic high electron mobility transistor （PHEMT） materials with different channel structures were designed and prepared by molecular beam epitaxy （MBE）. The analysis and characterization on the crystal property, warp of content and thickness of thin layers, strain and electronic mobility were carried out by the high resolution X-ray double crystal diffraction （DCXRD）, strain analyzer and hall analyzer. The relativity of the wafer strain and channel structure was described, and the influence principle of the mismatch-strain of the channel on the electronic property were studied. The test method of GaAs PHEMT capability degenera- tion caused by the thermo-strain of the channel were upbuilded, the electronic property after the high and low temperature storage were measured, and the test results of the electronic property degeneration caused by the thermo-strain were concluded. The results show that GaAs PHEMT materials can hold the electronic property under room temperature after the high and low temperature storage, the main influence ingredient of the channel strain on the electronic property is the mismatch-strain.
出处
《微纳电子技术》
CAS
北大核心
2009年第4期221-225,230,共6页
Micronanoelectronic Technology
关键词
砷化镓赝配高电子迁移率晶体管
砷化镓铟沟道
失配应力
热应力
电性能
GaAs PHEMT （pseudomorphic high electron mobility transistor）
InGaAs channel
mismatch-strain
thermo-strain
electronic property
