摘要
本工作主要研究在超高真空环境中,3keV能量电子束轰击Al、Mo、Cu三金属表面所导致的二次电子像上的变化。通过观察不同金属表面或同一金属但预处理方法不同的表面在电子轰击下,其二次电子像中所发生的变化,对电子诱导表面低能二次电子产额变化的机理进行了讨论。
The changes of secondary electron microscopy of AI, Mo, Cu surface induced by electron-bombardment of 3keV under UHV have been investigated. By meams of observation on the changes in secondary electron microscopy under electron-bombardment on surface of different sort of metals or on thn same metal surface but hretreated by different procedures. The mechanism of those changes has been discussed.
出处
《真空科学与技术学报》
EI
CAS
CSCD
1989年第3期141-144,149,共5页
Chinese Journal of Vacuum Science and Technology
