摘要
I. INTRODUCTION Implantation with intense pulsed ion beams causes great changes of morphology, microstructure and physicochemical behaviours of doped area of the metal target due to atomic mixing, rapid melting and quenching, and shock pressure. In the previous works,the results of microcrystallization and noncrystallization of implanted samples by pulsed
基金
Project supported by the National Natural Science Foundation of China
