摘要
研究了ＷＣ－Ｃｏ硬质合金刀具表面微波等离子体化学气相沉积（ＭＷ－ＰＣＶＤ）制备金刚石薄膜时不同的去钴预处理方式的影响。扫描电子显微镜形貌观察和喇曼谱分析表明，利用氢－氧等离子体处理方式有显著的去钴效果，相应沉积获得的金刚石薄膜质量相对较高。与酸腐蚀处理相比，微波等离子体化学气相沉积装置中实现氢－氧等离子体处理方式具有独特的优越性。
Diamond films were synthesized by MW PCVD on the WC Co cemented carbide cutting tools surface. The effect of different etching Co pre treatment methods was characterized by scanning electron microscopy(SEM) and Raman spectroscopy. The results show that etching Co pre treatment by H 2 O 2 plasma has remarkable effect on deposition of fairly high quality diamond film. Comparing to the acid etching method, the H 2-O 2 plasma pretreatment in MW PCVD device has some unique advantages.
出处
《高技术通讯》
EI
CAS
CSCD
1998年第4期35-38,共4页
Chinese High Technology Letters
基金
863计划资助项目
