摘要
We investigate, by first-principles calculations, the pressure dependence of formation enthalpies and defective geometry and bulk modulus of boron-related impurities （VB, Cs, NB, and OB） with different charged states in cubic boron nitride （c-BN） using a supercell approach. It is found that the nitrogen atoms surrounding the defect relax inward in the case of CB, while the nitrogen atoms relax outward in the other cases. These boron-related impurities become much more stable and have larger concentration with increasing pressure. The impurity CB^＋1 is found to have the lowest formation enthalpy, make the material exhibit semiconductor characters and have the bulk modulus higher than ideal c-BN and than those in the cases of other impurities. Our results suggest that the hardness of c-BN may be strengthened when a carbon atom substitutes at a B site.
We investigate, by first-principles calculations, the pressure dependence of formation enthalpies and defective geometry and bulk modulus of boron-related impurities （VB, Cs, NB, and OB） with different charged states in cubic boron nitride （c-BN） using a supercell approach. It is found that the nitrogen atoms surrounding the defect relax inward in the case of CB, while the nitrogen atoms relax outward in the other cases. These boron-related impurities become much more stable and have larger concentration with increasing pressure. The impurity CB^＋1 is found to have the lowest formation enthalpy, make the material exhibit semiconductor characters and have the bulk modulus higher than ideal c-BN and than those in the cases of other impurities. Our results suggest that the hardness of c-BN may be strengthened when a carbon atom substitutes at a B site.
基金
Supported by the National Natural Science Foundation of China under Grant Nos 10574053 and 10674053, 2004 NCET and 2003 EYTP of MOE of China, the National Basic Research Programme of China under Grant Nos 2005CB724400 and 2001CB711201, the 2007 Cheung Kong Scholars Programme of China, the Cultivation Fund of the Key Scientific and Technical Innovation Project under Grant No 2004-295, and ChanKjiang Scholar and Innovative P~esearch Team in University under Grant No IRT0625.
